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Photodiodes Specifications

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PN, PIN, or Avalanche




           
   Your choices are...
 
      
 
   PN Photodiode
 
     A two-electrode, radiation-sensitive PN junction formed in a semiconductor material in which the reverse current varies with illumination.
 
   PIN Photodiode
 
     A diode with a large intrinsic region sandwiched between P-doped and N-doped semiconducting regions.  Photons absorbed in this region create electron-hole pairs that are then separated by an electric field, thus generating an electric current in a load circuit.
 
   Avalanche Photodiode
 
     A device that utilizes avalanche multiplication of photocurrent by means of hole-electrons created by absorbed photons. When the device's reverse-bias voltage nears breakdown level, the hole-electron pairs collide with ions to create additional hole-electron pairs, thus achieving a signal gain.
 
   Search Logic:      All products with ANY of the selected attributes will be returned as matches. Leaving all boxes unchecked will not limit the search criteria for this question; products with all attribute options will be returned as matches.
Spectral Response




           
   Your choices are...
 
      
 
   X-ray
 
     X-ray photodiodes are optimized for X-ray, gamma ray, and beta radiation detection. 
 
   UV
 
     UV enhanced photodiodes are optimized for the UV and blue spectral regions, which requires special fabrication processes.
 
   Visible
 
     Photodiode operates in the visible range without enhancement for operation in UV or IR.
 
   IR
 
     IR enhanced photodiodes are optimized for the near IR spectral region, which requires special fabrication processes
 
   Search Logic:      All products with ANY of the selected attributes will be returned as matches. Leaving all boxes unchecked will not limit the search criteria for this question; products with all attribute options will be returned as matches.
Array




   Array?
 
     Photodiodes are packaged as multiples.  Photodiode arrays will contain a certain number of elements (Photodiodes).
 
   Search Logic:      "Required" and "Must Not Have" criteria limit returned matches as specified. Products with optional attributes will be returned for either choice.
More Specs




   Sensitivity:
 
     A measure of the effectiveness of a detector in producing an electrical signal at the peak sensitivity wavelength.
 
   Search Logic:      User may specify either, both, or neither of the "At Least" and "No More Than" values. Products returned as matches will meet all specified criteria.
   Spectral Response Range:
 
     The spectral response range of incident light the photodiode detects, also called wavelength range.
 
   Search Logic:      User may specify either, both, or neither of the limits in a "From - To" range; when both are specified, matching products will cover entire range. Products returned as matches will meet all specified criteria.
   Active Area Diameter or Length:
 
     The active area of the detector.  If the active area is a circle, the diameter, otherwise the length of the active area.
 
   Search Logic:      User may specify either, both, or neither of the "At Least" and "No More Than" values. Products returned as matches will meet all specified criteria.
   Active Area Height:
 
     The height of the active area if not circular.
 
   Search Logic:      User may specify either, both, or neither of the "At Least" and "No More Than" values. Products returned as matches will meet all specified criteria.
   Rise Time:
 
     The time necessary for a detector's output to go from 10% to 90% of its final value.
 
   Search Logic:      User may specify either, both, or neither of the "At Least" and "No More Than" values. Products returned as matches will meet all specified criteria.
   Quantum Efficiency:
 
     A photodiode's capability to convert light energy to electrical energy, expressed as a percentage, is its quantum efficiency.
 
   Search Logic:      All matching products will have a value greater than or equal to the specified value.
   Operating Temperature:
 
     The operating temperature of the photodiode.
 
   Search Logic:      User may specify either, both, or neither of the limits in a "From - To" range; when both are specified, matching products will cover entire range. Products returned as matches will meet all specified criteria.
   Dark Current:
 
     The current associated with a detector during operation in the dark with an applied reverse bias. Increased temperature and reverse bias will result in increased dark current. Also, larger active areas will generally have a higher dark current.
 
   Search Logic:      User may specify either, both, or neither of the "At Least" and "No More Than" values. Products returned as matches will meet all specified criteria.
   Noise Equivalent Power (NEP):
 
     The power of incident light, at a specific wavelength, required to produce a signal on the detector that is equal to the noise.
 
   Search Logic:      User may specify either, both, or neither of the "At Least" and "No More Than" values. Products returned as matches will meet all specified criteria.
   PSD?
 
     The photodiode is a position sensitive detector.
 
   Search Logic:      "Required" and "Must Not Have" criteria limit returned matches as specified. Products with optional attributes will be returned for either choice.
   Photodiode Material       
   Your choices are...
 
      
 
   Silicon
 
     Silicon photodiodes are the most common detectors of light used in instrumentation. The spectral response covers the UV, the Visible and the near infrared.
 
   Indium Gallium Arsenide
 
     Indium Gallium Arsenide (InGaAs) photodiodes are similar to silicon in performance and are used mostly in the near IR range of .8µm to 2.5µm. The noise performance does not match that of Si.
 
   Germanium
 
     Germanium photodiodes are similar to silicon in performance and are used mostly in the near IR range of .8µm to 2.5µm. The noise performance does not match that of Si.
 
   Gallium Nitride
 
     Gallium Nitride (GaN) photodiodes offer UV sensitivity while they reject VIS-IR background, thus facilitating measurements in this difficult wavelength range.
 
   Silicon Carbide
 
     Ultraviolet radiation is usually detected with a detector made from a wide bandgap semiconductor such as Silicon Carbide(SiC). The short wavelength UV radiation is absorbed by the SiC generating additional charge carriers in the material. Longer wavelength visible and infrared radiation cannot bridge the wide bandgap, and the SiC detector is blind to these wavelengths.
 
   Other
 
     Any other photodiode material not listed.
 
   Search Logic:      Products with the selected attribute will be returned as matches. Leaving or selecting "No Preference" will not limit the search criteria for this question; products with all attribute options will be returned as matches.
Part Numbers for Photodiodes

Part # Distributor Manufacturer Product Category Description
AE965 AmericanMicroSemi AMS Photodiodes Blue-Optimized Photodiode
FID13R13WX AmericanMicroSemi AMS Photodiodes PIN-Type Photodiode
ETX100MLA128 AmericanMicroSemi AMS Photosensor Arrays General-Purpose Photodiode Array
LC-TO18 AmericanMicroSemi AMS Photodiodes PIN-Type Photodiode
FID13S51WS AmericanMicroSemi AMS Photodiodes PIN-Type Photodiode
J16-5SP-R02M-HS AmericanMicroSemi AMS Photodiodes PIN-Type Photodiode
PDB-V612-1-ND Digi-Key Advanced Photonix Inc Sensors, Transducers PHOTODIODE BLUE 68.7MM SQ BARE
OSD100-3T AmericanMicroSemi AMS Photodiodes Infrared-Optimized Photodiode
PDB-C145-ND Digi-Key Advanced Photonix Inc Sensors, Transducers PHOTODIODE LENSED 0.4X0.4MM
S3901-256Q AmericanMicroSemi AMS Photosensor Arrays General-Purpose Photodiode Array

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Related Keywords
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