Bridgewater, New Jersey – February 13, 2008 – Hamamatsu Corporation has introduced several InGaAs devices for laser diode (LD) and dense wavelength division multiplexing (DWDM (read more)

Hamamatsu Corporation has introduced the G8931-20, an InGaAs avalanche photodiode with a large, 0.2 mm diameter active area and high-speed response of 0.9 GHz. The device is suitable for applications such as distance measurement, spatial light transmission, low-light-level detection, and optical time-domain reflectometry (OTDR). (read more)

Indium Gallium Arsenide (InGaAs) PIN photodiodes are detectors with a spectral response range of 0.9 µm – 1.7 µm, deliver high-speed response and low noise due to a low terminal capacitance and a large shunt resistance. (read more)

The new S9345 Si PIN dual-element photodiode has been developed to optimize reflection-mode optical switches. Using the triangulation method the S9345 can be used for near-far detection. (read more)

Melles Griot offers a wide selection of mounted silicon and PIN photodiodes, along with amplifiers, integrating spheres, and accessories, which can be assembled to meet specific laboratory requirements. (read more)

These Planar diffused photodiodes are designed for either photoconductive (low capacitance, high speed applications) or photovoltaic operation (low noise, DC applications). (read more)

Optimized for 1064 nm - Quadrant arrays and single active areas available. (read more)

The TSL1401CS linear photodiode sensor array consists of a 128x1 array of photodiodes, associated charge amplifier circuitry, and a pixel data-hold function that provides simultaneous-integration start and stop times for all pixels. (read more)

The high performance NIR InGaAs spectrometers use a linear photo diode array detector with 512 pixels (1024 optional) to provide maximum sensitivity. Several models provide a variety of operational ranges and resolutions suitable for both spectroscopy and optical spectrum analysis. (read more)

The TSL3301 is a high-sensitivity linear photodiode array with a pixel density of 300 dpi (pixels-per-inch). The device has a built-in 8-bit ADC with a 3-wire serial interface. The array consists of 102 pixels, each measuring 85um high by 77um wide and spaced on 85um centers. (read more)